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Samsung
SKU: M474A4G43AB1-CWEQ0
M474A4G43AB1-CWEQ0 - Samsung 32GB DDR4-3200 MHz PC4-25600 non-ECC Unbuffered CL22 260-Pin SoDIMM 1.2V Dual Rank Memory Module
Package Type: RetailPackage Quantity: 1Memory Technology: DDR4 SDRAMRAM Speed: 3200 MHzError Identifying: Non-ECCSignal Type: UnbufferedMemory Capacity: 32 GBProduct Voltage: 1.2VRAM Standard: DDR4-3200/PC4-25600Column Access Strobe (CAS): CL22Rank: Dual Rank x8Quantity of Pins: 260-pinRAM Genre: SoDIMMPrice:£425.91£346.27 ex. VAT / TAXIn Stock -
Samsung
SKU: M474A4G43MB1-CTD
M474A4G43MB1-CTD - Samsung 32GB PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module
Memory Capacity: 32 GBProduct Voltage: 1.2VRAM Standard: DDR4-2666/PC4-21300Column Access Strobe (CAS): CL19Rank: Dual Rank x8Quantity of Pins: 260-pinRAM Genre: SoDIMMPrice:£482.47£392.25 ex. VAT / TAXIn Stock -
Samsung
SKU: M474A4G43MB1-CTDQ
M474A4G43MB1-CTDQ - Samsung 32GB PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module
Package Type: RetailPackage Quantity: 1Memory Technology: 13692RAM Speed: 2666 MHzError Identifying: ECCSignal Type: 13849Supported Device: 3584Memory Capacity: 32 GBProduct Voltage: 1.2VRAM Standard: DDR4-2666/PC4-21300Column Access Strobe (CAS): CL19Rank: Dual Rank x8Quantity of Pins: 260-pinRAM Genre: 13906Eco Friendly: YesAssembly Required: YesPrice:£411.62£334.65 ex. VAT / TAXIn Stock -
Samsung
SKU: M474A4G43MB1-CTDQY
M474A4G43MB1-CTDQY - Samsung 32GB PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 SoDIMM 1.2V Dual-Rank Memory Module
Package Type: RetailColumn Access Strobe (CAS): CL19Memory Capacity: 32 GBProduct Voltage: 1.2VQuantity of Pins: 260-pinRAM Genre: SoDIMMRAM Standard: DDR4-2666/PC4-21300Rank: Dual Rank x8Supported Device: undefinedMemory Technology: DDR4 SDRAMRAM Speed: 2666 MHzError Identifying: ECCSignal Type: UnbufferedEco Friendly: YesAssembly Required: YesPrice:£411.62£334.65 ex. VAT / TAXIn Stock -
Samsung
SKU: M474A4G43MB1DQ0
M474A4G43MB1DQ0 - Samsung 32GB PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module
Price:£415.22£337.58 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73BH0-YH9
M474B1G73BH0-YH9 - Samsung 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Memory Capacity: 8 GBMemory Technology: DDR3 SDRAMProduct Voltage: 1.35VRAM Speed: 1333 MHzRAM Standard: DDR3-1333/PC3-10600Error Identifying: ECCSignal Type: UnbufferedColumn Access Strobe (CAS): CL9Rank: Dual Rank x8Quantity of Pins: 204-pinRAM Genre: SoDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£283.21£230.25 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73BH0-YK0
M474B1G73BH0-YK0 - Samsung 8GB PC3-12800 DDR3-1600MHz ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Package Type: RetailColumn Access Strobe (CAS): CL11Memory Capacity: 8 GBProduct Voltage: 1.35VQuantity of Pins: 204-pinRAM Genre: SoDIMMRAM Standard: DDR3-1600/PC3-12800Rank: Dual Rank x8Supported Device: undefinedMemory Technology: DDR3 SDRAMRAM Speed: 1600 MHzError Identifying: ECCSignal Type: UnbufferedEco Friendly: YesCompliance Standards: EU RoHSFCCAssembly Required: YesPrice:£320.39£260.48 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73BH0YH9
M474B1G73BH0YH9 - Samsung 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
Price:£247.92£201.56 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73EB0-YK0
M474B1G73EB0-YK0 - Samsung 8GB PC3-12800 DDR3-1600MHz ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Memory Technology: DDR3 SDRAMRAM Speed: 1600 MHzError Identifying: ECCSignal Type: UnbufferedMemory Capacity: 8 GBProduct Voltage: 1.35VRAM Standard: DDR3-1600/PC3-12800Column Access Strobe (CAS): CL11Rank: Dual Rank x8Quantity of Pins: 204-pinRAM Genre: SoDIMMEco Friendly: YesAssembly Required: YesCompliance Standards: CE,WEEE,RoHSPrice:£317.84£258.41 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73EB0-YK000
M474B1G73EB0-YK000 - Samsung 8GB PC3-12800 DDR3-1600MHz ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Memory Type: SODIMMCapacity: 8GBData Transfer Rate: 1600MhzPins: 204 PinBus Type: PC-12800Error Correction: ECCCycle Time: 1.25nsCas: CL11Memory Clock: 200MhzRank: Rank 2Voltage: 1.35Price:£317.84£258.41 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73EB0-YK0Q
M474B1G73EB0-YK0Q - Samsung 8GB PC3-12800 DDR3-1600MHz ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Package Type: RetailPackage Quantity: 1Memory Technology: 13700RAM Speed: 1600 MHzError Identifying: ECCSignal Type: 13849Supported Device: 3584Memory Capacity: 8 GBProduct Voltage: 1.35VRAM Standard: DDR3-1600/PC3-12800Column Access Strobe (CAS): CL11Rank: Dual Rank x8Quantity of Pins: 204-pinRAM Genre: 13906Eco Friendly: YesAssembly Required: YesPrice:£247.00£200.81 ex. VAT / TAXIn Stock -
Samsung
SKU: M474B1G73EB0-YMA
M474B1G73EB0-YMA - Samsung 8GB PC3-14900 DDR3-1866MHz ECC Unbuffered CL13 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Memory Type: SODIMMCapacity: 8GBData Transfer Rate: 1866MhzPins: 204 PinBus Type: PC-14900Error Correction: ECCCycle Time: 1.07nsCas: CL13Memory Clock: 233MhzRank: Rank 2Voltage: 1.35Price:£254.34£206.78 ex. VAT / TAXIn Stock