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MV-3T4G4D - Samsung 8GB Kit (2 X 4GB) DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory

Samsung

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SKU:
MV-3T4G4D
Price:
£147.33
£119.78 ex. VAT / TAX
You save £27.55
MV-3T4G4D - Samsung 8GB Kit (2 X 4GB) DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory

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Price:
£147.33
£119.78 ex. VAT / TAX
You save £27.55
46C566DB-4644-460E-8DA7-038C0B9646AB E06A9D60-42A9-4459-8131-FA3002495928
MV-3T4G4D - Samsung 8GB Kit (2 X 4GB) DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory

MV-3T4G4D - Samsung 8GB Kit (2 X 4GB) DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory

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Description

MV-3T4G4D - Samsung 8GB Kit (2 X 4GB) DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory

Details

Brand:
Samsung
Weight:
2.00 LBS

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MV-3T4G4D/US - Samsung 8GB Kit (2 X 4GB) PC3-10600 DDR3-1333MHz non-ECC Unbuffered CL9 SoDIMM Dual-Rank Memory

Memory Technology: DDR3 SDRAM
RAM Speed: 1333 MHz
Error Identifying: Non-ECC
Signal Type: Unbuffered
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Product Voltage: 1.5V
RAM Standard: DDR3-1333/PC3-10600
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MV-3T4G4 - Samsung 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Memory Module

Package Type: Retail
Memory Technology: DDR3 SDRAM
RAM Speed: 1333 MHz
Error Identifying: Non-ECC
Signal Type: Unbuffered
Memory Capacity: 4 GB
Product Voltage: 1.5V
RAM Standard: DDR3-1333/PC3-10600
Column Access Strobe (CAS): CL9
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Memory Technology: DDR3 SDRAM
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SKU: CT2KIT51264BC1339

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Package Type: Bulk
Memory Technology: DDR3 SDRAM
RAM Speed: 1333 MHz
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Signal Type: Unbuffered
Memory Capacity: 8 GB
Product Voltage: 1.5V
RAM Standard: DDR3-1333/PC3-10600
Column Access Strobe (CAS): CL9
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