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MV-3V4G3/US Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP ) Memory Module

Samsung

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SKU:
MV-3V4G3/US
Price:
£104.08
£84.62 ex. VAT / TAX
You save £19.46
MV-3V4G3/US Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP ) Memory Module

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Price:
£104.08
£84.62 ex. VAT / TAX
You save £19.46
46C566DB-4644-460E-8DA7-038C0B9646AB E06A9D60-42A9-4459-8131-FA3002495928
MV-3V4G3/US Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP ) Memory Module

MV-3V4G3/US Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP ) Memory Module

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Description

MV-3V4G3/US Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP ) Memory Module

Details

Brand:
Samsung
Weight:
2.00 LBS
Memory Technology:
DDR3 SDRAM
RAM Speed:
1600 MHz
Error Identifying:
Non-ECC
Signal Type:
Unbuffered
Memory Capacity:
4 GB
Product Voltage:
1.35V
RAM Standard:
DDR3-1600/PC3-12800
Column Access Strobe (CAS):
CL11
Rank:
Dual Rank x8
Quantity of Pins:
240-pin
RAM Genre:
UDIMM
Eco Friendly:
Yes
Compliance Standards:
EU RoHS,FCC
Assembly Required:
Yes

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