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Samsung
SKU: M312L5128MT0-CB3-N
M312L5128MT0-CB3-N - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Quad Rank Memory
Memory Type: DDR SDRAMCapacity: 4GBData Transfer Rate: 333MhzPins: 184 PinBus Type: PC-2700Error Correction: Registered ECCCycle Time: 6nsCas: CL2.5Memory Clock: 166MhzRank: Rank 4Voltage: 2.5Price:£200.97£163.39 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5128MT0-CB3Q
M312L5128MT0-CB3Q - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Quad Rank Memory
Memory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Quad Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£200.97£163.39 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5128MT0-CB3Q0
M312L5128MT0-CB3Q0 - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Quad Rank Memory
Memory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Quad Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£422.87£343.80 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5128MTO-CB3
M312L5128MTO-CB3 - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Dual Rank Memory
Memory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Quad Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£200.97£163.39 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5128MTO-CB3Q0
M312L5128MTO-CB3Q0 - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Dual Rank Memory
Package Type: RetailSupported Device: ServerMemory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£165.31£134.40 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L512AU0-CB3
M312L512AU0-CB3 - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Memory
Memory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£165.31£134.40 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L512AUO-CB3
M312L512AUO-CB3 - Samsung 4GB 333MHz DDR PC2700 Registered ECC CL2.5 184-Pin DIMM Memory
Memory Capacity: 4 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£569.39£462.92 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5620MTS-CB0
M312L5620MTS-CB0 - Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
Price:£165.31£134.40 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5623AUS-CA2
M312L5623AUS-CA2 - Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
Memory Capacity: 2 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 266 MHzRAM Standard: DDR-266/PC-2100Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x4Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£176.33£143.36 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5623AUS-CB0
M312L5623AUS-CB0 - Samsung 2GB DDR-266MHz PC2100 ECC Registered CL2.5 184-Pin DIMM Memory Module
Memory Capacity: 2 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 266 MHzRAM Standard: DDR-266/PC-2100Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x8Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£145.24£118.08 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5623AUS-CB3
M312L5623AUS-CB3 Samsung 2GB DDR Registered ECC PC-2700 333Mhz Memory
Memory Capacity: 2 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 333 MHzRAM Standard: DDR-333/PC-2700Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL2.5Rank: Dual Rank x8Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£310.75£252.64 ex. VAT / TAXIn Stock -
Samsung
SKU: M312L5623AUS-CCC
M312L5623AUS-CCC - Samsung 2GB 400MHz DDR PC3200 Registered ECC CL3 184-Pin DIMM Memory
Memory Capacity: 2 GBMemory Technology: DDR SDRAMProduct Voltage: 2.5VRAM Speed: 400 MHzRAM Standard: DDR-400/PC-3200Error Identifying: ECCSignal Type: RegisteredColumn Access Strobe (CAS): CL3Rank: Single Rank x8Quantity of Pins: 184-pinRAM Genre: RDIMMEco Friendly: YesCompliance Standards: EU RoHS,FCCAssembly Required: YesPrice:£181.88£147.87 ex. VAT / TAXIn Stock